دیتاشیت BC856BLT1G

مشخصات دیتاشیت

دانلود دیتاشیت BC856ALT1G Series	BC856ALT1G Series Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BC856BLT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 220@2mA,5V
Collector Cut-Off Current (Icbo): 15nA
Collector-Emitter Breakdown Voltage (Vceo): 65V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BC856
detail: Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)